The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2009
Filed:
Dec. 06, 2005
Sara Stolyarova, Haifa, IL;
Yehuda Sinai, Haifa, IL;
Moshe Weinstein, Mevaseret, IL;
Avi Shai, Haifa, IL;
Yael Nemirovsky, Haifa, IL;
Sara Stolyarova, Haifa, IL;
Yehuda Sinai, Haifa, IL;
Moshe Weinstein, Mevaseret, IL;
Avi Shai, Haifa, IL;
Yael Nemirovsky, Haifa, IL;
Technion Research & Development Foundation Ltd., Haifa, IL;
Abstract
A CdZnS film material, with a high value of thermal coefficient of resistance, in the range of 1.5% to 3.7%. The CdZnS material has excellent characteristics for use in a microbolometer-type uncooled infrared sensor. The film material can be deposited on microbolometer membranes or any other wafer for different applications. The film material can be deposited using the MOCVD technique, thermal evaporation or a different technique to form the film material over the wafer. The CdZnS properties can be modified controlling certain deposition parameters and different annealing techniques. The process is performed at temperature compatible with CMOS technology.