The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2009
Filed:
Apr. 08, 2005
Bai Xu, Slingerlands, NY (US);
Natalya Tokranova, Cohoes, NY (US);
James Castracane, Albany, NY (US);
Bai Xu, Slingerlands, NY (US);
Natalya Tokranova, Cohoes, NY (US);
James Castracane, Albany, NY (US);
The Research Foundation of State University of New York, Albany, NY (US);
Abstract
A silicon-on-insulator (SOI) substrate is anodically bonded to a glass substrate in a MEMS structure with or without electrically bypassing the insulator layer by electrically comprising the silicon layers. The insulator layer serves as an etch stop to create a well-defined, thin silicon membrane for a sensor. A second glass substrate is anodically bonded to the other side of the SOI substrate, and debonding of the existing anodic bond prevented by eliminating any potential drop across the existing bonded surface.