The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2009
Filed:
Apr. 19, 2006
Qi Luo, Cupertino, CA (US);
Sriram Akella, Fremont, CA (US);
Lior Kogut, Sunnyvale, CA (US);
Qualcomm MEMS Technologies, Inc., San Diego, CA (US);
Abstract
Methods of making MEMS devices including interferometric modulators involve depositing various layers, including stationary layers, movable layers and sacrificial layers, on a substrate. Voids are formed in one or more of the various layers so as to form a non-planar surface on the movable and/or the stationary layers. The voids are formed to extend through less than the entire thickness of the layer where they are being formed. Other layers may be formed over the formed voids. Removal of the sacrificial layer from between the resulting non-planar movable and/or stationary layers results in a released MEMS device having reduced contact area between the movable and stationary layers when the MEMS device is actuated. The reduced contact area results in lower adhesion forces and reduced stiction during actuation of the MEMS device. These methods may be used to manufacture released and unreleased interferometric modulators.