The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2009
Filed:
Sep. 01, 2004
Applicants:
Kalluri R. Sarma, Mesa, AZ (US);
Charles S. Chanley, Scottsdale, AZ (US);
Inventors:
Kalluri R. Sarma, Mesa, AZ (US);
Charles S. Chanley, Scottsdale, AZ (US);
Assignee:
Honeywell International Inc., Morristown, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides amorphous silicon thin-film transistors and methods of making such transistors for use with active matrix displays. In particular, one aspect of the present invention provides transistors having a structure based on a channel passivated structure wherein the amorphous silicon layer thickness and the channel length can be optimized. In another aspect of the present invention thin-film transistor structures that include a contact enhancement layer that can provide a low threshold voltage are provided.