The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2009
Filed:
Jun. 30, 2008
Applicant:
Jin-ki Jung, Ichon, KR;
Inventor:
Jin-Ki Jung, Ichon, KR;
Assignee:
Hynix Semiconductor Inc., Ichon-shi, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a magnetic tunnel junction cell comprises forming an insulation layer with an opening, forming a first pattern including multiple layers of a first electrode pattern on a bottom surface and a sidewall of the opening and an anti-ferromagnetic pattern over the first electrode pattern, forming a magnetic tunnel junction layer over the first pattern and the insulation layer, forming a second electrode having a line width greater than the width of the opening, over the magnetic tunnel junction layer, and etching the magnetic tunnel junction layer using the second electrode as an etch barrier.