The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2009

Filed:

Feb. 06, 2004
Applicants:

Parmanand Sharma, Dehli, IN;

Kudumboor Venkat Rao, Stockholm, SE;

Börje Johansson, Uppsala, SE;

Rajeev Ahuja, Uppsala, SE;

Inventors:

Parmanand Sharma, Dehli, IN;

Kudumboor Venkat Rao, Stockholm, SE;

Börje Johansson, Uppsala, SE;

Rajeev Ahuja, Uppsala, SE;

Assignee:

Spintronix AB, Stockholm, SE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method is provided for producing a doped dilute ferromagnetic semiconductor material, by doping Zinc Oxide in bulk form with manganese to a maximum level of 5 atomic percent concentration. The material is preferably sintered at a maximum temperature of 650° C. The result of this process is a semiconductor material comprising Mn-doped ZnO with a Mn concentration not exceeding 5 atomic percent, wherein the Mn-doped ZnO is ferromagnetic within at least a part of the temperature range from about 218 Kelvin to about 425 Kelvin.


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