The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2009
Filed:
Jun. 27, 2005
Steven Alfred Tysoe, Ballston Spa, NY (US);
Steven Francis Leboeuf, Schenectady, NY (US);
Mark Philip D'evelyn, Niskayuna, NY (US);
Venkat Subramaniam Venkataramani, Clifton Park, NY (US);
Vinayak Tilak, Schenectady, NY (US);
Jeffrey Bernard Fortin, Niskayuna, NY (US);
Charles Adrian Becker, Niskayuna, NY (US);
Stephen Daley Arthur, Glenville, NY (US);
Samhita Dasgupta, Niskayuna, NY (US);
Kanakasabapathi Subramanian, Clifton Park, NY (US);
Robert John Wojnarowski, Ballston Lake, NY (US);
Abasifreke Udo Ebong, Marietta, GA (US);
Steven Alfred Tysoe, Ballston Spa, NY (US);
Steven Francis LeBoeuf, Schenectady, NY (US);
Mark Philip D'Evelyn, Niskayuna, NY (US);
Venkat Subramaniam Venkataramani, Clifton Park, NY (US);
Vinayak Tilak, Schenectady, NY (US);
Jeffrey Bernard Fortin, Niskayuna, NY (US);
Charles Adrian Becker, Niskayuna, NY (US);
Stephen Daley Arthur, Glenville, NY (US);
Samhita Dasgupta, Niskayuna, NY (US);
Kanakasabapathi Subramanian, Clifton Park, NY (US);
Robert John Wojnarowski, Ballston Lake, NY (US);
Abasifreke Udo Ebong, Marietta, GA (US);
Momentive Performance Materials Inc., Albany, NY (US);
Abstract
An etchant including a halogenated salt, such as Cryolite (NaAlF) or potassium tetrafluoro borate (KBF), is provided. The salt may be present in the etchant in an amount sufficient to etch a substrate and may have a melt temperature of greater than about 200 degrees Celsius. A method of wet etching may include contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the support layer may include aluminum oxide; or contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the etchant may include Cryolite (NaAlF), potassium tetrafluoro borate (KBF), or both; and etching at least a portion of the support layer. The method may provide a laminate produced by growing a crystal onto an aluminum oxide support layer, and chemically removing at least a portion of the support layer by wet etch. An electronic device, optical device or combined device including the laminate is provided.