The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2009

Filed:

Dec. 21, 2006
Applicants:

Kee-ho Jung, Suwon-si, KR;

Jae-yong Jeong, Yongin-si, KR;

Chi-weon Yoon, Seoul, KR;

Inventors:

Kee-Ho Jung, Suwon-si, KR;

Jae-Yong Jeong, Yongin-si, KR;

Chi-Weon Yoon, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for programming a flash memory device is provided, where the flash memory device includes a plurality of memory cells, and where a threshold voltage of each of the memory cells is programmable in any one of plural corresponding data states. The method includes programming selected memory cells in a first data state, verifying a result of the programming, successively programming selected memory cells in at least two or more data states corresponding to threshold voltages which are lower than a corresponding threshold voltage of the first data state, and verifying results of the successive programming.


Find Patent Forward Citations

Jung, Kee-Ho. (2009). Flash memory device and method for programming multi-level cells in the same (U.S. Patent No. 7525838). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7525838

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…