The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2009
Filed:
Aug. 17, 2006
Tomofumi Kise, Tokyo, JP;
Tatsuya Kimoto, Tokyo, JP;
Noriyuki Yokouchi, Tokyo, JP;
Toshihiko Baba, Tokyo, JP;
Tomofumi Kise, Tokyo, JP;
Tatsuya Kimoto, Tokyo, JP;
Noriyuki Yokouchi, Tokyo, JP;
Toshihiko Baba, Tokyo, JP;
The Furukawa Electric Co., Ltd., Tokyo, JP;
Toshihiko BABA, Tokyo, JP;
Abstract
To provide a photonic crystal semiconductor device which enables various kinds of optical devices having a photonic crystal structure which is readily formed using a semiconductor and a semiconductor manufacturing process, and a manufacturing method thereof. The object can be achieved by a photonic crystal structure, including a lower DBR layer, a core layer, an upper DBR layer, and a dielectric multilayer filmwhich are sequentially laminated from an n-InP substrateside, a plurality of holesformed in the direction of a film thickness in the core layerand the upper DBR layer, and a line defect portionwith none of the plurality of holes formed therein and disposed between the plurality of holes, wherein the line defect portionserves as an optical waveguide.