The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2009

Filed:

Nov. 28, 2002
Applicants:

Petra Elisabeth DE Jongh, Eindhoven, NL;

Edwin Roks, Eindhoven, NL;

Robertus Adrianus Maria Wolters, Eindhoven, NL;

Hermanus Leonardus Peek, Eindhoven, NL;

Inventors:

Petra Elisabeth De Jongh, Eindhoven, NL;

Edwin Roks, Eindhoven, NL;

Robertus Adrianus Maria Wolters, Eindhoven, NL;

Hermanus Leonardus Peek, Eindhoven, NL;

Assignee:

NXP, B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/28 (2006.01); H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
Abstract

The semiconductor device () of the invention comprises a circuit covered by a passivation structure (). It is provided with a first and a second security element (A,B) which comprise local areas of the passivation structure (), and with a first and a second electrode (). The security elements (A,B) have a first and a second impedance, respectively, which impedances differ. This is realized in that the passivation structure has an effective dielectric constant that varies laterally over the circuit. Actual values of the impedances are measured by measuring means and transferred to an access device by transferring means. The access device comprises or has access to a central database device for storing the impedances. The access device furthermore may compare the actual values with the stored values of the impedances in order to check the authenticity or the identity of the semiconductor device.


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