The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2009
Filed:
Sep. 06, 2007
Haizhou Yin, Poughkeepsie, NY (US);
Katherine L. Saenger, Ossining, NY (US);
Chun-yung Sung, Poughkeepsie, NY (US);
Kai Xiu, Pleasantville, NY (US);
Haizhou Yin, Poughkeepsie, NY (US);
Katherine L. Saenger, Ossining, NY (US);
Chun-Yung Sung, Poughkeepsie, NY (US);
Kai Xiu, Pleasantville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A PFET is provided on a silicon layer having a (110) surface orientation and located in a substrate. A compressive stress liner disposed on the gate and source/drain regions of the PFET generates a primary longitudinal compressive strain along the direction of the PFET channel. A tensile stress liner disposed on at least one NFET located transversely adjacent to the PFET generates a primary longitudinal tensile strain along the direction of the NFET channel. A secondary stress field from the at least one NFET tensile liner generates a beneficial transverse tensile stress in the PFET channel. The net benefits of the primary compressive longitudinal strain and the secondary tensile transverse stress are maximized when the azimuthal angle between the direction of the PFET channel and an in-plane [10] crystallographic direction in the (110) silicon layer is from about 25° to about 55.