The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2009
Filed:
Mar. 01, 2007
Tatsushi Kato, Suwa, JP;
Tatsushi Kato, Suwa, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
A semiconductor device includes: an insulating layer selectively formed on the semiconductor base material; a first semiconductor layer made of single-crystal and formed on the semiconductor base material that is exposed below the insulating layer, the first semiconductor layer having an opening that exposes the semiconductor base material; an opening plane exposing a side face of the first semiconductor layer and provided below the support film, the second semiconductor layer and the first semiconductor layer by using the mask pattern as a mask; a portion defining a hollow part between the second semiconductor layer and the semiconductor base material; a first insulating film formed in the hollow part; and a second insulating film formed above the semiconductor base material on which the first insulating film is formed. The SOI forming region is provided in a plural number, and the insulating layer has a planar shape that encloses the SOI forming regions and separates one of the SOI forming regions from other SOI forming region in the enclosed area.