The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2009
Filed:
Sep. 16, 2005
Young-joon Kim, Seoul, KR;
Dae-woong Kim, Seoul, KR;
Min Kim, Seoul, KR;
Abstract
A nonvolatile memory device and a method of manufacturing the same are provided. An insulation layer having a high etching rate as compared with a pad oxide layer is formed as a buffer layer between a first STI film formed as a lower part of semiconductor substrate and a second STI film formed as an upper part of the semiconductor substrate, to obtain a pillar CD for an SAP structure. The buffer layer is etched more speedily in comparison with the pad oxide layer in a procedure of etching the pad oxide layer, thus ensuring a sufficient pillar CD without an excessive wet etch-back. Accordingly, a defect occurrence such as a grooving or seam can be prevented in realizing the SAP structure, and a tunnel oxide layer can be formed with uniform thickness.