The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2009
Filed:
Dec. 14, 2006
Hirofumi Inoue, Kamakura, JP;
Masahito Shinohe, Yokkaichi, JP;
Hirofumi Inoue, Kamakura, JP;
Masahito Shinohe, Yokkaichi, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A trench capacitor is formed in a semiconductor substrate with a capacitor insulating film. The trench has a conductive layer as storage node electrode buried in a trench. The conductive layer includes a first, a second, and third conductive layer. The first conductive layer is buried in a lower portion of the trench. The second conductive layer is buried in a recess on the upper surface of the first conductive layer. The third conductive layer is buried to contact with the first and second conductive layers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile