The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2009
Filed:
Dec. 29, 2006
Jeffrey E. Nause, Mableton, GA (US);
Shanthi Ganesan, Smyrna, GA (US);
Jeffrey E. Nause, Mableton, GA (US);
Shanthi Ganesan, Smyrna, GA (US);
Cermet, Inc., Atlanta, GA (US);
Abstract
A light-emitting zinc oxide based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity MgCdZnO; 0≦x<1, 0<y≦1, and x+y=0.1 to 1 compound semiconductor doped with p-type and/or n-type impurity. A first clad layer is joined to one surface of the light-emitting layer and formed of an n-type zinc oxide compound semiconductor having a composition different from the light-emitting layer. A second clad layer is joined to another surface of the light-emitting layer and formed of a low-resistivity, p-type zinc oxide based semiconductor having a composition different from the light-emitting layer.