The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2009
Filed:
Dec. 28, 2005
Jung Joo Kim, Seoul, KR;
Jung Joo Kim, Seoul, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
A method for forming a metallization contact in a semiconductor device includes (a) forming an insulating layer on a semiconductor substrate including an active device region or a lower metal wire; (b) forming a contact hole to expose a portion of the active device region or lower metal wire by etching a portion of the insulating layer; (c) depositing a first TiN layer on the insulating layer and inside the contact hole by a PVD process using a first carrier gas composition of nitrogen (N) and argon (Ar); (d) depositing a second TiN layer on the first TiN layer by a PVD process using a second carrier gas composition of nitrogen (N) and argon (Ar); and (e) forming a metal layer on the second TiN layer.