The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2009
Filed:
Jun. 30, 2005
Rak-hwan Kim, Gyeonggi-do, KR;
Hyun-seok Lim, Gyeonggi-do, KR;
Young-joo Cho, Gyeonggi-do, KR;
In-sun Park, Gyeonggi-do, KR;
Hyeon-deok Lee, Seoul, KR;
Hyun-suk Lee, Gyeonggi-do, KR;
Rak-Hwan Kim, Gyeonggi-do, KR;
Hyun-Seok Lim, Gyeonggi-do, KR;
Young-Joo Cho, Gyeonggi-do, KR;
In-Sun Park, Gyeonggi-do, KR;
Hyeon-Deok Lee, Seoul, KR;
Hyun-Suk Lee, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of fabricating a storage capacitor includes depositing a first titanium nitride layer on a dielectric layer using a chemical vapor deposition technique or an atomic layer deposition technique performed at a first temperature with reactant gases of titanium chloride (TiCl) gas and ammonia (NH) gas at a predetermined flow ratio and depositing a second titanium nitride layer on the first titanium nitride layer using a chemical vapor deposition process performed at a second temperature that is greater than the first temperature with reactant gases of titanium chloride (TiCl) gas and ammonia (NH) gas.