The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2009
Filed:
Apr. 25, 2006
Hee Seok Park, Kyungki-do, KR;
Masayoshi Koike, Kyungki-do, KR;
Kyeong Ik Min, Seoul, KR;
Samsung Electro-Mechanics Co., Ltd., Kyungki-Do, KR;
Abstract
The present invention provides methods for manufacturing a nitride layer and a vertical nitride semiconductor light emitting device. In manufacturing the nitride layer according to the invention, a sapphire substrate is prepared. A buffer layer made of a material having a melting point and a thermal conductivity higher than those of nitride is formed on the sapphire substrate. Also, the nitride layer is formed on the buffer layer. Then a laser beam is irradiated to an underside of the sapphire substrate to remove the nitride layer. According to the invention, the nitride layer is made of a material having a composition expressed by AlxInGaN, where 0≦x≦1, 0≦y≦1, and 0≦x+y≦1. In addition, the buffer layer is made of SiC.