The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2009
Filed:
Dec. 30, 2004
Applicants:
John W. Krawczyk, Richmond, KY (US);
Andrew L. Mcnees, Lexington, KY (US);
Inventors:
John W. Krawczyk, Richmond, KY (US);
Andrew L. McNees, Lexington, KY (US);
Assignee:
Lexmark International, Inc., Lexington, KY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B29D 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods of forming a fluid channel in a semiconductor substrate may include applying a material layer to at least one surface of the semiconductor substrate. The method may further include manipulating the material layer to form a surface topography corresponding to a channel, the surface topography being configured to control directionality of ion bombardment of said substrate along electromagnetic field lines in a plasma sheath coupled to said surface topography.