The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
Jan. 30, 2006
Nobuaki Hatori, Kawasaki, JP;
Tsuyoshi Yamamoto, Kawasaki, JP;
Koji Otsubo, Kawasaki, JP;
Yasuhiko Arakawa, Kanagawa, JP;
Nobuaki Hatori, Kawasaki, JP;
Tsuyoshi Yamamoto, Kawasaki, JP;
Koji Otsubo, Kawasaki, JP;
Yasuhiko Arakawa, Kanagawa, JP;
Fujitsu Limited, Kawasaki, JP;
The University of Tokyo, Tokyo, JP;
Abstract
An intrinsic GaAs waveguide layer is formed on a p-type AlGaAs cladding layer, a quantum dot active layer is formed further thereon. An n-type AlGaAs cladding layer is formed on the center portion of the quantum dot active layer. Thus-configured semiconductor laser is allowed to successfully suppress the area of the p-n junction plane to a small level, and to obtain a high level of reliability, because there is no need of processing the center portion of the quantum dot active layer, contributive to laser oscillation.