Magnetic storage cell, magnetic memory device and magnetic memory device manufacturing method

Abstract

A magnetic storage cell being capable of stable writing and having little adverse influence on an adjacent magnetic storage cell, and a magnetic memory device using the magnetic storage cell, and its manufacturing method are provided. In the invention, a plurality of TMR devices () () each including a TMR film (S) including a connecting portion () of which the magnetization direction is changed by an external magnetic field and a second magnetic layer () and allowing a current to flow therethrough in a direction perpendicular to a laminate surface, and a toroidal magnetic layer () disposed on a surface of the TMR film (S) so that a direction along the laminate surface is an axial direction and a write bit line () and a write word line () penetrate through the toroidal magnetic layer () are included, and the TMR devices (), () share a part of the toroidal magnetic layer () between them. Thereby, a decline in the magnitude of a circulating magnetic field in a closed magnetic path can be prevented, and the magnetizations of the connecting portion () and the second magnetic layer () can be reversed by a smaller write current.