The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
Mar. 30, 2006
Hisao Sato, Ichihara, JP;
Hisayuki Miki, Ichihara, JP;
Hisao Sato, Ichihara, JP;
Hisayuki Miki, Ichihara, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
The object of the present invention is to provide a gallium nitride-based compound semiconductor multilayer structure useful for manufacturing a gallium nitride-based compound semiconductor light-emitting device which requires a low operating voltage and from which a good emission output can be obtained. The present gallium nitride-based compound semiconductor multilayer structure comprises a substrate having thereon an n-type layer, a light-emitting layer and a p-type layer, the light-emitting layer having a multiple quantum well structure in which a well layer and a barrier layer are alternately stacked repeatedly and the light-emitting layer being provided between the n-type layer and the p-type layer, wherein the well layers consisting of the multiple quantum well structure comprise a well layer having an ununiform thickness and a well layer having a uniform thickness.