The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
Aug. 24, 2004
Applicants:
Stephan JO Cecile Henri Theeuwen, Nijmegen, NL;
Freerk Van Rijs, Nijmegen, NL;
Petra Christina Anna Hammes, Nijmegen, NL;
Ivo Bernhard Pouwel, Nijmegen, NL;
Hendrikus Ferdinand Franciscus Jos, Nijmegen, NL;
Inventors:
Stephan Jo Cecile Henri Theeuwen, Nijmegen, NL;
Freerk Van Rijs, Nijmegen, NL;
Petra Christina Anna Hammes, Nijmegen, NL;
Ivo Bernhard Pouwel, Nijmegen, NL;
Hendrikus Ferdinand Franciscus Jos, Nijmegen, NL;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
The LDMOS transistor () of the invention is provided with a stepped shield structure () and/or with a first () and a second () drain extension region having a higher dopant concentration than the second drain extension region, and being covered by the shield.