The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
Dec. 27, 2004
Tomohiko Tsutsumi, Kawasaki, JP;
Toru Anezaki, Kawasaki, JP;
Hideyuki Kojima, Kawasaki, JP;
Taiji Ema, Kawasaki, JP;
Tomohiko Tsutsumi, Kawasaki, JP;
Toru Anezaki, Kawasaki, JP;
Hideyuki Kojima, Kawasaki, JP;
Taiji Ema, Kawasaki, JP;
Fujitsu Microelectronics Limited, Tokyo, JP;
Abstract
An n-type embedded layer is formed in an N-LV region of a SRAM cell region after an element isolation insulating film is formed on a p-type Si substrate. Thereafter, a p-well and an n-well are formed. In formation of a channel-doped layer, ion implantation is also performed into the N-LV region of the SRAM cell region in parallel with ion implantation into an N-LV of a logic circuit region. Ion-implantation is further performed into the N-LV region of the SRAM cell region in parallel with ion implantation into an N-MV of an I/O region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile