The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
Mar. 10, 2006
Applicants:
Kinya Ohtani, Kanagawa, JP;
Kenya Kobayashi, Kanagawa, JP;
Inventors:
Kinya Ohtani, Kanagawa, JP;
Kenya Kobayashi, Kanagawa, JP;
Assignee:
NEC Electronics Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor deviceis a vertical MOSFET, and includes a plurality of unit cellsand a gate electrode. Each unit cellincludes a back-gate regionformed in the semiconductor substrate and a source regionformed in the semiconductor substrate so as to adjacently surround the back-gate regionin a plan-view. A portion of the back-gate regionis adjacent to the gate electrode. More specifically, the back-gate regionis in a rectangular plan-view shape, and adjacent to the gate electrodeat a pair of opposing sides out of the four sides thereof.