The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7521751 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 21, 2009

Filed:

Sep. 16, 2005
Applicant:

Ichiro Fujiwara, Kanagawa, JP;

Inventor:

Ichiro Fujiwara, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/105 (2006.01);
U.S. Cl.
CPC ...
Abstract

To provide a nonvolatile memory device suppressing a reduction of a data retention characteristic even if charges injected and stored into a local area of a nitride film is redistributed to achieve a reduction of voltage, the nonvolatile memory device in which hot electrons are injected into the local area of the nitride film at one or both of source•drain regions side to store data in a memory transistor is satisfied with a standard for evaluating a film quality of the nitride film, the standard being defined by one of the followings: a density of the bond group of silicon and hydrogen being under 1×10cm; an extinction coefficient in an ultraviolet region at a wavelength of 240 nm being under 0.10 or the extinction coefficient in 230 nm being under 0.14; an optical energy, a peak wavelength of an luminance spectrum, or a peak energy thereof.


Find Patent Forward Citations

Fujiwara, Ichiro. (2009). Nonvolatile memory device (U.S. Patent No. 7521751). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7521751

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