The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
Jan. 19, 2007
Tomonori Morizumi, Anan, JP;
Atsuo Michiue, Komatsushima, JP;
Shingo Tanisaka, Anan, JP;
Nichia Corporation, Anan-shi, JP;
Abstract
A nitride semiconductor laser element, has: a nitride semiconductor layer including a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer laminated in that order; and resonator end faces formed mutually opposing at the end of said nitride semiconductor layers, wherein an impurity is contained in at least an optical output region of the resonator end faces, with the concentration of said impurity having a concentration distribution that is asymmetric in reference to a peak position, in the lamination direction of the nitride semiconductor layers, and said optical output region has a wider bandgap than other regions in the active layer or said optical output region has a higher impurity concentration than other regions in the active layer.