The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
Oct. 05, 2007
Young-sub You, Pyungtak-si, KR;
Hun-hyeoung Leam, Yongin-si, KR;
Seok-woo Nam, Yongin-si, KR;
Bong-hyun Kim, Incheon-si, KR;
Woong Lee, Seoul, KR;
Sang-hoon Lee, Euiwang-si, KR;
Young-sub You, Pyungtak-si, KR;
Hun-Hyeoung Leam, Yongin-si, KR;
Seok-Woo Nam, Yongin-si, KR;
Bong-Hyun Kim, Incheon-si, KR;
Woong Lee, Seoul, KR;
Sang-Hoon Lee, Euiwang-si, KR;
Abstract
In methods of forming an oxide layer and an oxynitride layer, a substrate is loaded into a reaction chamber having a first pressure and a first temperature. The oxide layer is formed on the substrate using a reaction gas while increasing a temperature of the reaction chamber from the first temperature to a second temperature under a second pressure. Additionally, the oxide layer is nitrified in the reaction chamber to form the oxynitride layer on the substrate. When the oxide layer and/or the oxynitride layer are formed on the substrate, minute patterns of a semiconductor device, for example a DRAM device, an SRAM device or an LOGIC device may be easily formed on the oxide layer or the oxynitride layer.