The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
May. 04, 2005
Tetsuji Yamaguchi, Atsugi, JP;
Etsuko Asano, Atsugi, JP;
Naomi Yazaki, Atsugi, JP;
Tomoya Futamura, Atsugi, JP;
Tomoko Nishikawa, Atsugi, JP;
Tetsuji Yamaguchi, Atsugi, JP;
Etsuko Asano, Atsugi, JP;
Naomi Yazaki, Atsugi, JP;
Tomoya Futamura, Atsugi, JP;
Tomoko Nishikawa, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
The present invention provides a method for manufacturing a semiconductor device having high characteristic and reliability. The etching damage during dry etching after forming an electrode or a wiring over an insulating film is prevented. The damage is suppressed by forming a conductive layer so that charged particles due to plasma during dry etching are not generated in a semiconductor layer. Accordingly, it is an object of the invention to provide a method not for generating the deterioration of the transistor characteristic especially in a thin film transistor having a minute structure.