The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
Dec. 28, 2006
Cheol MO Jeong, Kyeongki-do, KR;
Whee Won Cho, Chungcheongbuk-do, KR;
Jung Geun Kim, Seoul, KR;
Seong Hwan Myung, Kyeongki-do, KR;
Cheol Mo Jeong, Kyeongki-do, KR;
Whee Won Cho, Chungcheongbuk-do, KR;
Jung Geun Kim, Seoul, KR;
Seong Hwan Myung, Kyeongki-do, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A method of forming a gate of a flash memory device, including the steps of forming a gate on a semiconductor substrate and forming an oxide layer on the entire surface of the gate, forming a nitride layer on a sidewall of the oxide layer in a spacer form, performing a polishing process so that a top surface of the gate is exposed, and then stripping the nitride layer to form an opening, forming a barrier metal layer on a sidewall of the opening, and forming a tungsten layer in the opening.