The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7521299 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 21, 2009

Filed:

Jun. 01, 2005
Applicants:

Hideki Tanaka, Chino, JP;

Takashi Masuda, Suwa, JP;

Ichio Yudasaka, Chino, JP;

Takashi Aoki, Chino, JP;

Inventors:

Hideki Tanaka, Chino, JP;

Takashi Masuda, Suwa, JP;

Ichio Yudasaka, Chino, JP;

Takashi Aoki, Chino, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a transistor includes disposing a droplet containing a bank material as a solute or a dispersoid on a substrate, drying the droplet to form a bank, ejecting a conductive material on a part of the bank to form a first conductive region and a second conductive region with the part of the bank interposed therebetween, removing the bank to form a groove between the first and second conductive regions, supplying a semiconductor material into the groove to form a semiconductor film, forming a gate insulating film on the semiconductor film, and forming a gate electrode at a position on the gate insulating film facing the semiconductor film.


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Tanaka, Hideki. (2009). Method of manufacturing transistor, method of manufacturing electro-optical device, and method of manufacturing electronic device (U.S. Patent No. 7521299). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7521299

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