The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
Mar. 29, 2004
Zheng-hong LU, Toronto, CA;
Xiaodong Feng, Toronto, CA;
Zheng-Hong Lu, Toronto, CA;
Xiaodong Feng, Toronto, CA;
Other;
Abstract
The present invention provides a layered structure including a fullerene layer exhibiting Ohmic behavior. The layered device includes a layer of fullerenes and a layer of a fluoride compound of pre-selected thickness. The layered structure includes a third layer of an electrically conductive material located on the second layer to which electrical contact can be made. The thickness of the second layer is selected so that the layered structure exhibits substantially Ohmic contact across the first, second and third layers. The present invention also provides a light-emitting device which includes a substrate and a first electrically conductive layer defining an anode electrode layer on the substrate. The device includes an electron transport layer which includes fullerenes, and a second electrically conductive layer defining a cathode electrode layer on the electron transport layer. The device includes a layer of light-emissive material between the anode electrode layer and the electron transport layer.