The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2009

Filed:

Aug. 23, 2006
Applicants:

Venkat Subramaniam Venkataramani, Clifton Park, NY (US);

Wesley Hackenberger, State College, PA (US);

Seongtae Kwon, State College, PA (US);

Paul William Rehrig, Marlborough, MA (US);

Inventors:

Venkat Subramaniam Venkataramani, Clifton Park, NY (US);

Wesley Hackenberger, State College, PA (US);

Seongtae Kwon, State College, PA (US);

Paul William Rehrig, Marlborough, MA (US);

Assignee:

General Electric Company, Niskayuna, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 1/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of making a single crystal material is provided. The method includes providing a polycrystalline material having a plurality of grains. The method further includes adding a seed crystal to the polycrystalline material to define a plane of growth for the polycrystalline material. Further, the polycrystalline material having the seed crystal may be subjected to heat-treating, where the heat-treating does not include melting the polycrystalline material.


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