The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2009
Filed:
Aug. 30, 2006
Kenji Mori, Kanagawa, JP;
Kenji Mori, Kanagawa, JP;
Giga Hertz Technology Corp., Tokushima-shi, JP;
System Mori Ltd., Yokohama-shi, JP;
Abstract
A circuit simulator for a semiconductor device with reduced channel length includes a method of calculating a model formula for circuit simulation of a semiconductor device; calculating first parasitic resistance independent of gate voltage using actually measured device data; calculating second parasitic resistance dependent on the gate voltage using I-V characteristic of the device without the first parasitic resistance; dividing the second parasitic resistance into channel resistance and third parasitic resistance generated under both ends of a gate length using plural kinds of diffusion resistance TEG in which the width W of each kind of diffusion resistance is the same as each other, but the length L of each kind of diffusion resistance is different from the other kinds of diffusion resistance; and obtaining an I-V characteristic formula for the semiconductor device using the third parasitic resistance as an independent characteristic.