The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2009
Filed:
May. 22, 2006
Masakazu Yamaguchi, Kawasaki, JP;
Masakazu Yamaguchi, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-Shi, JP;
Abstract
A power semiconductor device has a first base layer of first conductive type, a contact layer of first conductive type formed on a surface of the first base layer, a second base layer of first conductive layer which is formed on the surface of the first base layer at a side opposite to the first contact layer and has an impurity concentration higher than that of the first base layer, a second contact layer of second conductive type formed on the surface of the first base layer or the second base layer, and a junction termination region formed in vicinity of or in contact with outside in a horizontal direction of the second contact layer.