The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2009
Filed:
May. 16, 2005
Yukinobu Hikosaka, Kawasaki, JP;
Mitsushi Fujiki, Kawasaki, JP;
Kazutoshi Izumi, Kawasaki, JP;
Naoya Sashida, Kawasaki, JP;
Aki Dote, Kawasaki, JP;
Yukinobu Hikosaka, Kawasaki, JP;
Mitsushi Fujiki, Kawasaki, JP;
Kazutoshi Izumi, Kawasaki, JP;
Naoya Sashida, Kawasaki, JP;
Aki Dote, Kawasaki, JP;
Fujitsu Microelectronics Limited, Tokyo, JP;
Abstract
A semiconductor device includes: a semiconductor substrate; a MOS transistor formed in the semiconductor substrate and having an insulated gate and source/drain regions on both sides of the insulated gate; a ferroelectric capacitor formed above the semiconductor substrate and having a lower electrode, a ferroelectric layer and an upper electrode; a metal film formed on the upper electrode and having a thickness of a half of or thinner than a thickness of the upper electrode; an interlayer insulating film burying the ferroelectric capacitor and the metal film; a conductive plug formed through the interlayer insulating film, reaching the metal film and including a conductive glue film and a tungsten body; and an aluminum wiring formed on the interlayer insulating film and connected to the conductive plug. A new problem near an upper electrode contact is solved which may otherwise be caused by adopting a W plug over the F capacitor.