The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2009
Filed:
Sep. 14, 2006
Joshua I. Bergman, Thousand Oaks, CA (US);
Berinder Brar, Newbury Park, CA (US);
Amal Ikhlassi, Thousand Oaks, CA (US);
Gabor Nagy, Thousand Oaks, CA (US);
Gerard J. Sullivan, Newbury Park, CA (US);
Joshua I. Bergman, Thousand Oaks, CA (US);
Berinder Brar, Newbury Park, CA (US);
Amal Ikhlassi, Thousand Oaks, CA (US);
Gabor Nagy, Thousand Oaks, CA (US);
Gerard J. Sullivan, Newbury Park, CA (US);
Teledyne Licensing, LLC, Thousand Oaks, CA (US);
Abstract
A metamorphic high electron mobility transistor having a plurality of high electron mobility transistor layers, a semi-insulating substrate, a ternary metamorphic buffer layer positioned between the semi-insulating substrate and the plurality of high electron mobility transistor layers, the ternary metamorphic buffer layer being AlGaSb such that x is greater than or equal to 0.2 but less than 0.3, a stabilizing layer positioned between the ternary metamorphic buffer layer and the plurality of high electron mobility transistor layers, the stabilizing layer being AlGaSb such that y is greater than 0.2 but less than or equal to 0.3 and y is greater than x, and a nucleation layer interposed between the semi-insulating substrate and the ternary metamorphic buffer layer.