The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2009
Filed:
Jan. 17, 2007
Tatsuya Hirata, Osaka, JP;
Shouzi Tanaka, Nara, JP;
Tatsuya Hirata, Osaka, JP;
Shouzi Tanaka, Nara, JP;
Panasonic Corporation, Osaka, JP;
Abstract
In an element for a MOS type solid-state imaging device, a leakage current caused by a stress generated in a vicinity of an element isolation region having an STI structure is reduced. The element for the MOS type solid-state imaging device comprises: a signal accumulation regionof a second conductivity type, provided in an interior of a semiconductor substrate or wellof a first conductivity type, for accumulating a signal charge generated by performing photoelectric convention; a gate electrodeprovided on the semiconductor substrate or wella drain regionof a second conductivity type, provided on a surface portion, of the semiconductor substrate or wellon which the gate electrode is formed; and an element isolation regionprovided on the surface portion, of the semiconductor substrate or wellon which the gate electrode is formed. The element isolation regionhas the STI structure, and a cavityis formed in an interior of the element isolation region