The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2009
Filed:
May. 24, 2007
Seung Hee Hong, Seoul, KR;
Cheol MO Jeong, Icheon-si, KR;
Jung Geun Kim, Seoul, KR;
Eun Soo Kim, Icheon, KR;
Seung Hee Hong, Seoul, KR;
Cheol Mo Jeong, Icheon-si, KR;
Jung Geun Kim, Seoul, KR;
Eun Soo Kim, Icheon, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method of forming a metal wire in a semiconductor device includes performing a first etching process on an insulating layer formed on a semiconductor substrate to form a trench and an insulating layer pattern, the insulating layer pattern defining the trench. A barrier metal layer is formed over the insulating layer pattern and the trench. A second etching process is performed on the barrier metal layer to expose upper corners of the trench while leaving the trench substantially covered with the barrier metal layer. A metal layer is formed over the barrier metal layer in the trench. A heat treatment process is performed for reflowing the metal layer. The metal layer is planarized.