The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2009

Filed:

Apr. 02, 2002
Applicants:

Xiaonan LI, Evergreen, CO (US);

Yanfa Yan, Littleton, CO (US);

Timothy J. Coutts, Golden, CO (US);

Timothy A. Gessert, Conifer, CO (US);

Clay M. Dehart, Westminster, CO (US);

Inventors:

Xiaonan Li, Evergreen, CO (US);

Yanfa Yan, Littleton, CO (US);

Timothy J. Coutts, Golden, CO (US);

Timothy A. Gessert, Conifer, CO (US);

Clay M. Dehart, Westminster, CO (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.


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