The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2009
Filed:
Dec. 28, 2005
Koenraad Van Schuylenbergh, Sunnyvale, CA (US);
Eugene M. Chow, Fremont, CA (US);
Jengping LU, San Jose, CA (US);
Koenraad Van Schuylenbergh, Sunnyvale, CA (US);
Eugene M. Chow, Fremont, CA (US);
JengPing Lu, San Jose, CA (US);
Palo Alto Research Center Incorporated, Palo Alto, CA (US);
Abstract
Methods for integrally forming high Q tunable capacitors and high Q inductors on a substrate are described. A method for integrally forming a capacitor and a microcoil on a substrate may involve depositing and patterning a dielectric layer on the substrate, depositing and patterning a sacrificial layer on the substrate, depositing and patterning conductive material on the semiconductor substrate, depositing and patterning a polymer layer on the semiconductor substrate, removing an exposed portion of the conductive material exposed by the patterned polymer layer to release a portion of the conductive pattern from the semiconductor substrate to form out-of-plane windings of the microcoil, depositing second conductive material on exposed portions of the conductive material, and removing the sacrificial layer. The patterned conductive material may include a windings portion of the microcoil, an overlapping electrode portion of the capacitor and a support portion for the electrode of the capacitor.