The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2009
Filed:
Jun. 15, 2007
Yoon-ho Son, Yongin-si, KR;
Sang-don Nam, Seoul, KR;
Suk-hun Choi, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A ferroelectric memory device and a method of forming the same are provided. At least two lower electrode patterns are formed on an interlayer insulating layer covering a semiconductor substrate. A seed layer pattern filling a space between at least the two lower electrode patterns and having a planar surface is formed. A ferroelectric layer is formed on the lower electrode pattern and the seed layer pattern. An upper electrode overlapping the two lower electrode patterns is formed on the ferroelectric layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile