The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2009

Filed:

Mar. 05, 2004
Applicants:

Makoto Iwai, Kasugai, JP;

Makoto Ohmori, Nagoya, JP;

Takashi Yoshino, Aichi-prefecture, JP;

Minoru Imaeda, Aichi-prefecture, JP;

Inventors:

Makoto Iwai, Kasugai, JP;

Makoto Ohmori, Nagoya, JP;

Takashi Yoshino, Aichi-prefecture, JP;

Minoru Imaeda, Aichi-prefecture, JP;

Assignee:

NGK Insulators, Ltd., Nagoya, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); B01F 3/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

An object of the present invention is to produce an oxide film having good surface morphology and crystal quality, by a metal organic chemical vapor deposition using two or more raw material gases of metal organic compounds and oxygen gas. It is used a film forming system having a first supply holeA, a second supply holeB, a third supply holeC and a film forming chamber. A first raw material gas 'A' containing a first metal organic compound is supplied through the first supply holeA into the chamber. A second raw material gas 'B' containing the second metal organic compound is supplied through the second supply holeB into the chamber, and oxygen gas “C” is supplied through the third supply holeC into the chamber. The oxygen gas “D” contacts the first raw material gas “E” before the oxygen gas is mixed with the second raw material gas “F” in the chamber


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