The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2009
Filed:
Jan. 26, 2006
Tatsuya Saito, Ebina, JP;
Tohru Den, Tokyo, JP;
Kazuhiko Fukutani, Santa Cruz, CA (US);
Aya Imada, Yokohama, JP;
Tatsuya Saito, Ebina, JP;
Tohru Den, Tokyo, JP;
Kazuhiko Fukutani, Santa Cruz, CA (US);
Aya Imada, Yokohama, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A process for producing a nano-structure is provided which enables control of the pore diameters and the pore intervals by film formation conditions. The process produces a nano-structure of an aluminum-silicon-germanium mixed film containing silicon and germanium at a content of 20 to 70 atom % relative to aluminum, the mixed film being constituted of a matrix composed mainly of silicon and germanium in a composition ratio of SiGe(0≦X≦1), and cylindrical portions mainly composed of aluminum having a diameter of not larger 30 nm in the matrix. In the process, the mixed film is formed at a film-forming rate of not higher than 150 nm/min.