The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2009
Filed:
Oct. 20, 2005
Subhendu Guha, Bloomfield Hills, MI (US);
Arindam Banerjee, Bloomfield Hills, MI (US);
Kevin Beernink, Clarkston, MI (US);
Todd Johnson, Royal Oak, MI (US);
Ginger Pietka, Harrison Township, MI (US);
Gregory Demaggio, Ann Arbor, MI (US);
Shengzhong (Frank) Liu, Rochester Hills, MI (US);
Jeffrey Yang, Troy, MI (US);
Subhendu Guha, Bloomfield Hills, MI (US);
Arindam Banerjee, Bloomfield Hills, MI (US);
Kevin Beernink, Clarkston, MI (US);
Todd Johnson, Royal Oak, MI (US);
Ginger Pietka, Harrison Township, MI (US);
Gregory DeMaggio, Ann Arbor, MI (US);
Shengzhong (Frank) Liu, Rochester Hills, MI (US);
Jeffrey Yang, Troy, MI (US);
United Solar Ovonic LLC, Auburn Hills, MI (US);
Abstract
An ultra lightweight semiconductor device such as a photovoltaic device is fabricated on a non-etchable barrier layer which is disposed upon an etchable substrate. The device is contacted with an appropriate etchant for a period of time sufficient to remove at least a portion of the thickness of the substrate. The barrier layer prevents damage to the photovoltaic material during the etching process. Photovoltaic devices fabricated by this method have specific power levels in excess of 300 w/kg.