The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2009
Filed:
Sep. 16, 2004
Yoshichika Kato, Tachikawa, JP;
Satoshi Yoshida, Tama, JP;
Keiichi Mori, Tokyo, JP;
Kenji Kondou, Chofu, JP;
Yoshihiko Hamada, Akiruno, JP;
Osamu Imaki, Hachioji, JP;
Yoshichika Kato, Tachikawa, JP;
Satoshi Yoshida, Tama, JP;
Keiichi Mori, Tokyo, JP;
Kenji Kondou, Chofu, JP;
Yoshihiko Hamada, Akiruno, JP;
Osamu Imaki, Hachioji, JP;
Japan Aviation Electronics Industry Limited, Tokyo, JP;
Abstract
A micro-optic device including a complicate structure and a movable mirror is made to be manufactured in a reduced length of time. A silicon substrate and a single crystal silicon device layer with an intermediate layer of silicon dioxide interposed therebetween defines a substrate on which a layer of mask material is formed and is patterned to form a mask having the same pattern as the configuration of the intended optical device as viewed in plan view. A surface which is to be constructed as a mirror surface is chosen to be in a plane of the silicon crystal. Using the mask, the device layer is vertically etched by a reactive ion dry etching until the intermediate layer is exposed. Subsequently, using KOH solution, a wet etching which is anisotropic to the crystallographic orientation is performed with an etching rate which is on the order of 0.1 μm/min for a time interval on the order of ten minutes is performed to convert the sidewall surface of the mirror into a smooth crystallographic surface. Subsequently, the intermediate layer is selectively subject to a wet etching to remove the intermediate layer only in an area located below the movable part of the optical device.