The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2009

Filed:

Mar. 24, 2006
Applicants:

Su-bong Hong, Yongin-si, KR;

Chun-gyoo Lee, Yongin-si, KR;

Sang-jo Lee, Yongin-si, KR;

Sang-ho Jeon, Yongin-si, KR;

Sang-hyuck Ahn, Yongin-si, KR;

Inventors:

Su-Bong Hong, Yongin-si, KR;

Chun-Gyoo Lee, Yongin-si, KR;

Sang-Jo Lee, Yongin-si, KR;

Sang-Ho Jeon, Yongin-si, KR;

Sang-Hyuck Ahn, Yongin-si, KR;

Assignee:

Samsung SDI Co., Ltd., Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 1/62 (2006.01); H01J 5/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

An electron emission device includes a substrate; a cathode electrode formed on the substrate; a gate electrode crossing the cathode electrode and insulated from the cathode electrode; and an electron emission region electrically connected to the cathode electrode. The cathode electrode includes a main electrode with an inner opening portion, an isolate electrode placed in the opening portion and spaced apart from the main electrode by a distance, and a resistance layer disposed between the main electrode and the isolate electrode. The isolate electrode has a via hole. The electron emission region contacts the isolate electrode, and is placed in the via hole. The isolate electrode has a first height, and the electron emission region has a second height smaller than the first height.


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