The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2009
Filed:
Mar. 28, 2006
Tetsuro Asano, Gunma, JP;
Tetsuro Asano, Gunma, JP;
SANYO Electric Co., Ltd., Osaka, JP;
Abstract
A unit HBT and a unit FET are arranged to be adjacent to each other through an isolation region and a base electrode of the unit HBT is connected to a source electrode of the unit FET to form a unit element, and a plurality of unit elements are connected to form an active element. This makes it possible to implement the active element in which a current is not likely to concentrate on the unit element and no destruction is generated by the second breakdown. Moreover, although a buried gate electrode structure is used to ensure a withstand pressure in the unit FET, a buried portion is structured not to be diffused to an InGaP layer, and thereby it is possible to prevent Pt from being abnormally diffused. Furthermore, a selection etching can be used for a formation of an emitter mesa, that of a base mesa, that of a ledge in the unit HBT, and a gate recess etching in the unit FET, and a good reproducibility can be obtained.