The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2009
Filed:
Mar. 21, 2006
Yeonjoon Park, Yorktown, VA (US);
Sang H. Choi, Poquoson, VA (US);
Glen C. King, Yorktown, VA (US);
James R. Elliott, Jr., Yorktown, VA (US);
Diane M. Stoakley, Yorktown, VA (US);
Yeonjoon Park, Yorktown, VA (US);
Sang H. Choi, Poquoson, VA (US);
Glen C. King, Yorktown, VA (US);
James R. Elliott, Jr., Yorktown, VA (US);
Diane M. Stoakley, Yorktown, VA (US);
Abstract
A lattice matched silicon germanium (SiGe) semiconductive alloy is formed when a {111} crystal plane of a cubic diamond structure SiGe is grown on the {0001} C-plane of a single crystalline AlOsubstrate such that a <110> orientation of the cubic diamond structure SiGe is aligned with a <1,0,−1,0> orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium. A layer of SiGeis formed on the cubic diamond structure SiGe. The value of X (i) defines an atomic percent of germanium satisfying 0.2277<X<1.0, (ii) is approximately 0.2777 where the layer of SiGeinterfaces with the cubic diamond structure SiGe, and (iii) increases linearly with the thickness of the layer of SiGe.