The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2009
Filed:
Apr. 22, 2003
Stephen Thomas, Iii, West Los Angeles, CA (US);
Ken Elliott, Thousand Oaks, CA (US);
David H. Chow, Newbury Park, CA (US);
Stephen Thomas, III, West Los Angeles, CA (US);
Ken Elliott, Thousand Oaks, CA (US);
David H. Chow, Newbury Park, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
A sub-micron, on the order of 80-nanometer diameter, resonant tunneling diode having a peak-to-valley ratio of approximately 5.1 to 1, and a method for its manufacture. The invention is unique in that its performance characteristics are unmatched in comparably sized resonant tunneling diodes. Further, the polyimide passivation and planarization methodology provides unexpected processing advantages with respect to application in the fabrication of resonant tunneling diodes. The invention includes a substratethat serves as a foundation for bottom contact layersand a polyimidecoating. An ohmic metal contactand emitter metal contactprotrude above the polyimidecoating exposing the ohmic metal contactand emitter metal contactThe contacts are capped with an etch-resistant coatingthus allowing for the polyimide etch, and other etching processes without adversely affecting the contacts.